| 2010-10 | A digital-alloy AlGaAs/GaAs distributed Bragg reflector for application to 1.3 mu m surface emitting laser diodes | Cho, N. K.; Kim, K. W.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2007-01-30 | Carrier confinement and interband transition properties of InAs/GaAs quantum dots grown by using atomic layer epitaxy | Kim, J. H.; Park, Y. J.; Park, Y. M.; Song, J. D.; Lee, J. I.; Kim, T. W. |
| 2006-08 | Characterization of In0.5Ga0.5As quantum dot infrared photodetector (QDIP) structures treated with post-growth processes | Lim, J. Y.; Nam, H. D.; Song, J. D.; Choi, W. J.; Lee, J. I.; Yang, H. S. |
| 2007-10 | Current-voltage and noise characteristics of reverse-biased Au/n-GaAs Schottky diodes with embedded InAs quantum dots | Arpatzanis, N.; Tassis, D. H.; Dimitriadis, C. A.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2006-08 | Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure | Jung, I. Y.; Park, Y. M.; Park, Y. J.; Lee, J. I.; Kim, T. W. |
| 2010-03 | Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxy | Ryu, S. P.; Cho, N. K.; Lim, J. Y.; Choi, W. J.; Song, J. D.; Lee, J. I.; Lee, Y. T.; Park, C. G. |
| 2007-09-01 | Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures | Arpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C. |
| 2007-07-15 | Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diode | Ryu, S. P.; Lee, Y. T.; Cho, N. K.; Choi, W. J.; Song, J. D.; Lee, J. I.; Kwack, H. S.; Cho, Y. H. |
| 2006-05 | Energy states in InAs-GaAs quantum dots-in-asymmetric-well infrared photodetector structure | Nam, H. D.; Doyennette, L.; Song, J. D.; Choi, W. J.; Yang, H. S.; Lee, J. I.; Julien, F. H. |
| 2006-05 | Gate bias controlled NDR in an in-plane-gate quantum dot transistor | Son, S. H.; Choi, Y. S.; Hwang, S. W.; Lee, J. I.; Park, Y. J.; Yu, Y. S.; Ahn, D. |
| 2007-09-13 | High power broadband superluminescent diodes with chirped multiple quantum dots | Yoo, Y. C.; Han, I. K.; Lee, J. I. |
| 2008-04 | Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors | Son, S. H.; Kang, M. G.; Hwang, S. W.; Lee, J. I.; Park, Y. J.; Yu, Y. S.; Ahn, D. |
| 2008-12 | Ideality factor dependence of capacitance and reverse current noise in Au/n-GaAs Schottky diodes with embedded self-assembled InAs quantum dots | Arpatzanis, N.; Hastas, N. A.; Dimitriadis, C. A.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2009-10-19 | Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation | Dasika, V. D.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I.; Goldman, R. S. |
| 2006-10 | Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots | Lee, J. I.; Nam, H. D.; Choi, W. J.; Yu, B. Y.; Song, J. D.; Hong, S. C.; Noh, S. K.; Chovet, A. |
| 2006-09 | Low-frequency noise in high-k gate dielectric nanoscale MOSFETs | Han, I. K.; Nam, H. D.; Choi, W. J.; Lee, J. I.; Szentpali, B.; Chovet, A. |
| 2009-07-01 | Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots | Dasika, V. D.; Goldman, R. S.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I. |
| 2007-03 | Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy | Jung, S. I.; Yeo, H. Y.; Yun, I.; Han, I. K.; Cho, S. M.; Lee, J. I. |
| 2007-10 | Near-field scanning optical microscopy of quantum dot broad area laser diodes | Jung, S. I.; Yeo, H. Y.; Yun, I.; Leem, J. Y.; Han, I. K.; Kim, J. S.; Lee, J. I. |
| 2006-05 | Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources | Song, J. D.; Choi, W. J.; Lee, J. I.; Kim, J. M.; Chang, K. S.; Lee, Y. T. |
| 2006-06 | Photoluminescence study on the growth of self-assembled InAs quantum dots: Formation characteristics of bimodal-sized quantum dots | Jung, S. I.; Yeo, H. Y.; Yun, I.; Leem, J. Y.; Han, I. K.; Kim, J. S.; Lee, J. I. |
| 2008 | QD technology and market prospects in the sectors of space exploration, biomedicine, defense, and security | Charitidis, C. A.; Golnas, A.; Chouliaras, F.; Arpatzanis, N.; Dimitriadis, C. A.; Lee, J. I.; Bakolias, C. |
| 2011-08 | Quantum dot-like effect in InGaAs/GaAs quantum well | Abdellatif, M. H.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I. |
| 2009-04 | Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2Ga0.8As wells | Arpatzanis, N.; Hastas, N. A.; Dimitriadis, C. A.; Konstantinidis, G.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2012-02 | Self-Assembled Growth of GaAs Anti Quantum Dots in InAs Matrix by Migration Enhanced Molecular Beam Epitaxy | Lee, E. H.; Song, J. D.; Kim, S. Y.; Han, I. K.; Chang, S. K.; Lee, J. I. |
| 2007-10 | Size distribution effects on self-assembled InAs quantum dots | Jung, S. I.; Yeo, H. Y.; Yun, I.; Leem, J. Y.; Han, I. K.; Kim, J. S.; Lee, J. I. |
| 2006-11 | Study on the energy-band structure of an InAs/InGaAs/GaAs quantum-dot infrared photodetector structure | Kim, J. S.; Kim, E. K.; Song, J. D.; Choi, W. J.; Lee, J. I. |
| 2007-03 | The optical characteristics of epitaxial lateral and vertical overgrowth of GaN on stripe-patterned Si substrate | Yeo, H. Y.; Jung, S. I.; Yun, I.; Lee, J. I.; Han, I. K.; Cho, S. M. |
