- | A novel method for the growth of high quality GaAs single crystals. | Park Young Ju; KIM EUN KYU; Min Suk-Ki |
- | A role of hydrogen atom on the formation of nano-crystalline silicon | CHOI WON CHEOL; KIM EUN KYU; Min Suk-Ki; PARK JONG YEUN |
- | A study of photoluminescence from copper and cerium impurities in silicon films | KIM EUN KYU; Min Suk-Ki; CHOI WON CHEOL; PARK JONG YEUN |
- | AlGaAs/GaAs heteroface solar cells grown by metalorganic chemical vapor deposition | PARK YOUNG KYUN; Kim Seong Il; KIM YOUN; KIM EUN KYU; Kim Yong Tae; Min Suk-Ki |
- | Anharmonic decay of phonons in silicon from first-principles calculations | PARK YOUNG KYUN; Kim Seong Il; Min Suk-Ki |
- | Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory | PARK YOUNG KYUN; Kim Seong Il; KIM YOUN; KIM EUN KYU; Min Suk-Ki |
1993-01 | Atomic force microscopic observation in the surface morphologies and roughness of plasma deposited tungsten and tungsten nitride thin films. | Kim Yong Tae; C. S. Kwon; I. H. Choi; C. W. Lee; Min Suk-Ki |
- | Band-gap narrowing in carbon doped GaAs with various substrate orientations studied by photoluminescence spectroscopy | KIM EUN KYU; Min Suk-Ki; S. Cho; D. Lee |
- | Carbon doping characteristics in GaAs grown by LPMOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim |
- | Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성 |
- | Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations. | SON CHANG-SIK; MIN BYUNG DON; 박만장; 황성민; Kim Seong Il; KIM MOO SUNG; Min Suk-Ki |
- | Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; Min Suk-Ki; KIM MOO SUNG; 최인훈 |
- | Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor deposition | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
- | Characteristics of amorphous Ta-Si-N thin film for Cu metallization | 김동준; 정순필; Kim Yong Tae; Min Suk-Ki; 박종완 |
- | Characteristics of amorphous tungsten nitride diffusion barrier for metal-organic chemical vapor deposited Cu metallization. | Kim Yong Tae; 이창우; 박상규; Min Suk-Ki |
- | Characteristics of C-doped GaAs and critical layer thickness. | Kim Seong Il; EOM KYUNG SOOK; KIM YOUN; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성 |
- | Characteristics of etching for Al//0//.//3Ga//0//.//7As/GaAs multilayer. | Kim Seong Il; Min Suk-Ki; MIN BYUNG DON; KIM MOO SUNG; S. K. Park; C. Lee |
- | Characteristics of GaN micro-crystal formed by the direct reaction of NH//3 with Ga-melt | Park Young Ju; 손맹호; KIM EUN KYU; Min Suk-Ki |
- | Characteristics of laser dry etching for AlGaAs/GaAs multilayer. | Kim Seong Il; Min Suk-Ki; 박세기; MIN BYUNG DON; KIM MOO SUNG; 이천 |
1994-01 | Characteristics of RF magnetron sputtered (Ba, Sr)TiO//3 thin films on RuO//2 bottom electrode. | Kim Yong Tae; J. G. Lee; H. N. Lee; C. S. Kwon; S. H. Choh; Min Suk-Ki |
- | Characteristics of RuOx thin films as a sacrificial diffusion barrier for Cu metallization | Kim Yong Tae; H. S. Yoon; C. S. Kwon; H. N. Lee; J. Jang; Min Suk-Ki |
- | Characterization for GaAs/AlGaAs superlattice grown by LPMOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; CHO HOON YOUNG |
- | Characterization of Mn-center in vertical gradient freeze-GaAs crystals by electron paramagnetic resonance. | KIM EUN KYU; Min Suk-Ki; Y. J. Park; I. W. Park; T. H. Yeom |
1994-01 | Comparison of high temperature thermal stability of Ru and RuO//2 schottky contact to GaAs. | Kim Yong Tae; S. K. Kwak; C. W. Lee; J. G. Lee; C. S. Kwon; K. S. Jung; Min Suk-Ki |
1993-01 | Comparison of plasma deposited tungsten and tungsten nitride schottky contacts to GaAs. | Kim Yong Tae; S. J. Lee; C. S. Kwon; C. W. Lee; Min Suk-Ki |
- | Computer analysis of heteroface AlGaAs/GaAs solar cell | 이대욱; Kim Seong Il; KIM HEO JEN; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN |
- | Control of the lateral growth rate during MOCVD growth on patterned GaAs substrates with CCl//4. | Kim Seong Il; KIM MOO SUNG; Min Suk-Ki; KIM YOUN |
- | Conversion efficiency increase of GaAs solar cell grown on V-grooved GaAs substrate by metalorganc chemical vapor deposition. | SON CHANG-SIK; 박만장; MIN BYUNG DON; 황성민; Kim Seong Il; KIM EUN KYU; Min Suk-Ki |
- | Crystallographic orientation dependence of carbon incorporation into GaAs epilayers | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
- | Crystallographic orientation dependence of carbon incorporationin to GaAs epilayers using CBr ₄ and CCl ₄ | SON CHANG-SIK; Kim Seong Il; KIM YOUN; 황성민; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인철 |