Browsing byAuthorMin Suk-Ki

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Showing results 1 to 30 of 115

Issue DateTitleAuthor(s)
-A novel method for the growth of high quality GaAs single crystals.Park Young Ju; KIM EUN KYU; Min Suk-Ki
-A role of hydrogen atom on the formation of nano-crystalline siliconCHOI WON CHEOL; KIM EUN KYU; Min Suk-Ki; PARK JONG YEUN
-A study of photoluminescence from copper and cerium impurities in silicon filmsKIM EUN KYU; Min Suk-Ki; CHOI WON CHEOL; PARK JONG YEUN
-AlGaAs/GaAs heteroface solar cells grown by metalorganic chemical vapor depositionPARK YOUNG KYUN; Kim Seong Il; KIM YOUN; KIM EUN KYU; Kim Yong Tae; Min Suk-Ki
-Anharmonic decay of phonons in silicon from first-principles calculationsPARK YOUNG KYUN; Kim Seong Il; Min Suk-Ki
-Anharmonic decay of phonons in silicon from third-order density-functional perturbation theoryPARK YOUNG KYUN; Kim Seong Il; KIM YOUN; KIM EUN KYU; Min Suk-Ki
1993-01Atomic force microscopic observation in the surface morphologies and roughness of plasma deposited tungsten and tungsten nitride thin films.Kim Yong Tae; C. S. Kwon; I. H. Choi; C. W. Lee; Min Suk-Ki
-Band-gap narrowing in carbon doped GaAs with various substrate orientations studied by photoluminescence spectroscopyKIM EUN KYU; Min Suk-Ki; S. Cho; D. Lee
-Carbon doping characteristics in GaAs grown by LPMOCVD.Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim
-Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD.SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성
-Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations.SON CHANG-SIK; MIN BYUNG DON; 박만장; 황성민; Kim Seong Il; KIM MOO SUNG; Min Suk-Ki
-Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4.SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; Min Suk-Ki; KIM MOO SUNG; 최인훈
-Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor depositionSON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인훈
-Characteristics of amorphous Ta-Si-N thin film for Cu metallization김동준; 정순필; Kim Yong Tae; Min Suk-Ki; 박종완
-Characteristics of amorphous tungsten nitride diffusion barrier for metal-organic chemical vapor deposited Cu metallization.Kim Yong Tae; 이창우; 박상규; Min Suk-Ki
-Characteristics of C-doped GaAs and critical layer thickness.Kim Seong Il; EOM KYUNG SOOK; KIM YOUN; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성
-Characteristics of etching for Al//0//.//3Ga//0//.//7As/GaAs multilayer.Kim Seong Il; Min Suk-Ki; MIN BYUNG DON; KIM MOO SUNG; S. K. Park; C. Lee
-Characteristics of GaN micro-crystal formed by the direct reaction of NH//3 with Ga-meltPark Young Ju; 손맹호; KIM EUN KYU; Min Suk-Ki
-Characteristics of laser dry etching for AlGaAs/GaAs multilayer.Kim Seong Il; Min Suk-Ki; 박세기; MIN BYUNG DON; KIM MOO SUNG; 이천
1994-01Characteristics of RF magnetron sputtered (Ba, Sr)TiO//3 thin films on RuO//2 bottom electrode.Kim Yong Tae; J. G. Lee; H. N. Lee; C. S. Kwon; S. H. Choh; Min Suk-Ki
-Characteristics of RuOx thin films as a sacrificial diffusion barrier for Cu metallizationKim Yong Tae; H. S. Yoon; C. S. Kwon; H. N. Lee; J. Jang; Min Suk-Ki
-Characterization for GaAs/AlGaAs superlattice grown by LPMOCVD.Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; CHO HOON YOUNG
-Characterization of Mn-center in vertical gradient freeze-GaAs crystals by electron paramagnetic resonance.KIM EUN KYU; Min Suk-Ki; Y. J. Park; I. W. Park; T. H. Yeom
1994-01Comparison of high temperature thermal stability of Ru and RuO//2 schottky contact to GaAs.Kim Yong Tae; S. K. Kwak; C. W. Lee; J. G. Lee; C. S. Kwon; K. S. Jung; Min Suk-Ki
1993-01Comparison of plasma deposited tungsten and tungsten nitride schottky contacts to GaAs.Kim Yong Tae; S. J. Lee; C. S. Kwon; C. W. Lee; Min Suk-Ki
-Computer analysis of heteroface AlGaAs/GaAs solar cell이대욱; Kim Seong Il; KIM HEO JEN; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN
-Control of the lateral growth rate during MOCVD growth on patterned GaAs substrates with CCl//4.Kim Seong Il; KIM MOO SUNG; Min Suk-Ki; KIM YOUN
-Conversion efficiency increase of GaAs solar cell grown on V-grooved GaAs substrate by metalorganc chemical vapor deposition.SON CHANG-SIK; 박만장; MIN BYUNG DON; 황성민; Kim Seong Il; KIM EUN KYU; Min Suk-Ki
-Crystallographic orientation dependence of carbon incorporation into GaAs epilayersSON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈
-Crystallographic orientation dependence of carbon incorporationin to GaAs epilayers using CBr ₄ and CCl ₄SON CHANG-SIK; Kim Seong Il; KIM YOUN; 황성민; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인철

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