| 1996-01 | 100 ㎚ electron beam lithography using a modified scanning electron microscope. | 김성일; 민석기; 김은규; 최범호; 황성우; 정석구; 김태근 |
| 2001-01 | 1천 배나 빠른 차세대 광컴퓨터 : 신개념 컴퓨터 | 김은규 |
| 2000-01 | A 40 nm nano-mold lithography | 박창민; 최범호; 현찬경; 김은규; 황성우 |
| 1996-01 | A formation of carbon micro-pattern by laser-induced deposition with CCl//2F//2 gas. | 김성일; 민석기; 김은규; 박세기; 이천 |
| 1988-03 | A leakage current effect on ICTS spectrum for EL2 levels. | 김은규; 조훈영; 민석기 |
| 1995-02 | A novel method for the growth of high quality GaAs single crystals. | 박용주; 김은규; 민석기 |
| 1989-10 | A relation between EL2(E//c-0.81eV) and EL6(E//c-0.35eV) in annealed HB-GaAs by hydrogen plasma exposure. | 김은규; 조훈형; 민석기 |
| 1997-02 | A role of hydrogen atom on the formation of nano-crystalline silicon | 최원철; 김은규; 민석기; 박종윤 |
| 1998-10 | A self-assembled silicon quantum dot transistor operating at room temperature | 최범호; 황성민; I. G. Kim; 신형철; 김용; 김은규 |
| 1997-01 | A short-period GaAs/AlGaAs quantum-wire array laser with a submicrometer current blocking layer | 김태근; 박경현; 김은규; 민석기; 박정호 |
| 1998-12 | A silicon self assembled quantum dot transistor operating at room temperature | 최범호; 황성우; I.G. Kim; 신형철; 김용; 김은규 |
| 1999-08 | A silicon self assembled quantum dot transistor operating at room temperature | 최범호; 황성우; I.G. Kim; 신형철; 김용; 김은규 |
| 1998-10 | A study for the facet evolution of CCl4-doped Al0.5Ga0.5As/GaAs multilayers grown on patterned GaAs substrates by metalorganic chemical vapor deposition | 김효진; 손창식; 박영균; 김은규; 김태환 |
| 2000-01 | A study of GaN characteristics affected by stress existing in N+-implanted Si(111) substrate | 고의관; 박용주; 김은규; 박찬수; 이석현; 이정희; 조성호 |
| 1997-12 | A study of photoluminescence from copper and cerium impurities in silicon films | 김은규; 민석기; 최원철; 박종윤 |
| 1998-09 | A study of the optimal conditions of the metal electrode patterns for efficiency improvement of AlGaAs/GaAs heteroface solar cells | 김효진; 박영균; 김성일; 이대욱; 김은규; 김태환 |
| 1999-01 | A study on laser direct dry etching of GaAs/AlGaAs multi-layer. | 박세기; 이천; 김은규 |
| 1988-05 | Abnormal behavior of midgap electron trap in HB-GaAs during thermal annealing. | 김은규; 민석기; 조훈영 |
| 1998-09 | AlGaAs/GaAs heteroface solar cells grown by metalorganic chemical vapor deposition | 박영균; 김성일; 김용; 김은규; 김용태; 민석기 |
| 1999-12 | Aligned In0.5Ga0.5As quantum dots on laser patterned GaAs substrate | 박세기; 현찬경; 민병돈; 김효진; 황성민; 김은규; H.K. Lee; 이천; 김용 |
| 2002-11 | Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice | 김광무; 박용주; 박영민; 현찬경; 김은규; 박정호 |
| 2000-11 | Alignment of InAs quantum dots on GaAs using the manipulation of strain fields | 김광무; 박용주; 박영민; 나종범; 현찬경; 김은규; 박정호 |
| 2000-04 | Alignment of the InAs quantum dots on GaAs using the manipulation of strain fields | 김광무; 박용주; 박영민; 현찬경; 김은규; 박정호 |
| 1997-05 | Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory | 박영균; 김성일; 김용; 김은규; 민석기 |
| 1997-11 | Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory | 박영균; 김성일; 김용; 김은규; 민석기 |
| 2000-10 | Application of atomic-force-microscope direct patterning to selective positioning of InAs quantum dots on GaAs | 현찬경; S.C. Choi; 송상헌; 황성우; 손맹호; 안도열; 박용주; 김은규 |
| 1997-09 | Band-gap narrowing in carbon doped GaAs with various substrate orientations studied by photoluminescence spectroscopy | 김은규; 민석기; S. Cho; D. Lee |
| 1997-10 | Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor deposition | 손창식; 김성일; 김용; 박영균; 김은규; 민석기; 최인훈 |
| 1996-07 | CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질 | 손창식; 김성일; 민병돈; 김은규; 민석기; 최인훈 |
| 1997-06 | Characteristic of Mn-centers in vertical gradient freeze-GaAs crystals by electron paramagnetic resonance | 박용주; 민석기; 김은규; I. W. Park; T. H. Yeom; H. Munekata; H. Kukimoto |
