Showing results 1 to 26 of 26
Issue Date | Title | Author(s) |
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2020-02 | 3D Stackable Synaptic Transistor for 3D Integrated Artificial Neural Networks | Kim, Seong Kwang; Jeong, YeonJoo; Bidenko, Pavlo; Lim, Hyeong-Rak; Jeon, Yu -Rim; Kim, Hansung; Lee, Yun Jung; Geum, Dae-Myeong; Han, JaeHoon; Choi, Changhwan; Kim, Hyung-jun; Kim, SangHyeon |
2018-03 | Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates | Ju, Gun wu; Kim, Hansung; Shim, Jae Phil; Kim, Seong Kwang; Lee, Byeong-Hyeon; Won, Sung Ok; Kim, Sanghyeon; Kim, Hyung-jun |
2016-12 | Cost-effective Fabrication of In0.53Ga0.47As-on-Insulator on Si for Monolithic 3D via Novel Epitaxial Lift-Off (ELO) and Donor Wafer Re-use | Kim, Seong Kwang; Shim, Jaephil; Geum, Dae-Myeong; Kim, Chang Zoo; Kim, Han-Sung; Kim, Yeon-Su; Kim, Sang Hyeon; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-jun; Kim, Dong Myong; Kang, Hang-Kyu |
2023-01 | Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference | Kim, Joon Pyo; Kim, Seong Kwang; Park, Seohak; Kuk, Song-hyeon; Kim, Tae yoon; Kim, Bong Ho; Ahn, Seong-Hun; Cho, Yong-Hoon; Jeong, YeonJoo; Choi, Sung-Yool; Kim, Sanghyeon |
2018-01 | Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si | Shim, Jae-Phil; Kim, Seong Kwang; Kim, Hansung; Ju, Gunwu; Lim, Heejeong; Kim, SangHyeon; Kim, Hyung-jun |
2023-04 | Effect of Scandium Insertion Into the Gate-Stack of Ferroelectric Field-Effect Transistors | Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon |
2021-06 | Electrical Analysis for Wafer-Bonded Interfaces of p(+)GaAs/n(+)InGaAs and p(+)InGaAs/n(+)InGaAs | Geum, Dae-Myeong; Kim, Seong Kwang; Lim, Hyeong-Rak; Park, Juhyuk; Jeong, Jaeyong; Han, Jae Hoon; Choi, Won Jun; Kim, Hyo-Jin; Kim, Sanghyeon |
2019-11 | Epitaxial Lift-Off Technology for Large Size III-V-on-Insulator Substrate | Lee, Subin; Kim, Seong Kwang; Han, Jae-Hoon; Song, Jin Dong; Jun, Dong-Hwan; Kim, Sang-Hyeon |
2017-01-23 | Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density | Kim, Seong Kwang; Geum, Dae-Myeong; Shim, Jae-Phil; Kim, Chang Zoo; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Sanghyeon; Kim, Dong Myong |
2017-09 | Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques | Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon |
2016-08 | Fully subthreshold current-based characterization of interface traps and surface potential in III-V-on-insulator MOSFETs | Kim, Seong Kwang; Lee, Jungmin; Geum, Dae-Myeong; Park, Min-Su; Choi, Won Jun; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Sanghyeon; Kim, Dong Myong |
2018-10 | Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs | Kim, SangHyeon; Kim, Seong Kwang; Shin, SangHoon; Han, Jae-Hoom; Grum, Dae-Myeong; Kim, Hyung-jun; Lee, Subin; Kim, Han Sung; Ju, Gunwu; Song, Jin Dong; Alam, Muhammad A.; Shim, Jae-Phil |
2021-01 | High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb | Kim, Sang-Hyeon; Roh, Ilpyo; Han, Jae-Hoon; Geum, Dae-Myeong; Kim, Seong Kwang; Kang, Soo Seok; Kang, Hang-Kyu; Lee, Woo Chul; Kim, Seong Keun; Hwang, Do Kyung; Song, Yun Heub; Song, Jin Dong |
2017-01-05 | High-speed epitaxial lift-off for III-V-on-insulator transistors on Si substrates | Kim, SangHyeon; Geum, Dae-Myeong; Kim, Seong Kwang; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun |
2019-08 | Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs | Kim, Sanghyeon; Kim, Seong Kwang; Shin, Sanghoon; Han, Jae-Hoon; Geum, Dae-Myeong; Shim, Jae-Phil; Lee, Subin; Kim, Hansung; Ju, Gunwu; Song, Jin Dong; Alam, M. A.; Kim, Hyung-Jun |
2019-09 | Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on- Insulator n-MOSFETs | Lim, Hyeong-Rak; Kim, Seong Kwang; Han, Jae-Hoon; Kim, Hansung; Geum, Dae-Myeong; Lee, Yun-Joong; Ju, Byeong-Kwon; Kim, Hyung-Jun; Kim, Sanghyeon |
2018-05 | Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel | Kim, Seong Kwang; Shim, Jae-Phil; Geum, Dae-Myeong; Kim, Jaewon; Kim, Chang Zoo; Kim, Han-Sung; Song, Jin Dong; Choi, Sung-Jin; Kim, Dae Hwan; Choi, Won Jun; Kim, Hyung-Jun; Kim, Dong Myong; Kim, Sanghyeon |
2019-09-30 | Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrode | Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Kim, Hansung; Han, Jae-Hoon; Hwang, Do Kyung; Song, Jin Dong; Kim, Hyung-jun; Kim, Sanghyeon |
2016-10 | Low-Subthreshold-Slope Asymmetric Double-Gate GaAs-on-Insulator Field-Effect-Transistors on Si | Kim, SangHyeon; Geum, Dae-Myeong; Kim, Seong Kwang; Kim, Hyung-Jun; Song, Jin Dong; Choi, Won Jun |
2018-03 | Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III-V Templates | Shim, Jae-Phil; Kim, Han-Sung; Ju, Gunwu; Lim, Hyeong-Rak; Kim, Seong Kwang; Han, Jae-Hoon; Kim, Hyung-Jun; Kim, Sang-Hyeon |
2020-03 | Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process | Geum, Dae-Myeong; Kim, Seong Kwang; Lee, Subin; Lim, Donghwan; Kim, Hyung-Jun; Choi, Chang Hwan; Kim, Sang-Hyeon |
2019-12 | Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems | Geum, Dae-Myeong; Kim, SangHyeon; Kim, Seong Kwang; Kang, SooSeok; Kyhm, JiHoon; Song, Jindong; Choi, Won Jun; Yoon, Euijoon |
2023-05 | Oxygen Scavenging in HfZrOx-Based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement | Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon |
2022-09 | Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties | Kim, Bong Ho; Kuk, Song-hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon |
2020-04 | Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors | Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Han, JaeHoon; Kim, Hyungjun; Jeong, YeonJoo; Kim, Sang-Hyeon |
2019-12 | Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation | Geum, Dae-Myeong; Kim, Seong Kwang; Kang, Chang-Mo; Moon, Seung-Hyun; Kyhm, Jihoon; Han, JaeHoon; Lee, Dong-Seon; Kim, SangHyeon |