| - | Effect of atomic bond structure on crystal orientation dependence of carbon doping in GaAs grown by MOCVD | PARK YOUNG KYUN; Kim Seong Il; KIM YOUN; SON CHANG-SIK; KIM EUN KYU; Min Suk-Ki |
| - | Effect of crystallographic orientation on carbon incorporation into GaAs and AlGaAs epilayers grown by metalorganic chemical vapor deposition. | SON CHANG-SIK; Kim Seong Il; Min Suk-Ki; KIM EUN KYU; KIM YOUN; 최인훈 |
| - | Effect of hydrogen annealing on electrical properties of Bi-layered perovskite thin films | KIM CHUN KEUN; 김익수; 최훈상; Kim Seong Il; 이창우; Kim Yong Tae |
| - | Effect of low pressure annealing for low temperature crystallization of SrBi//2Ta//2O//9 ferroelectric thin films | 최훈상; 이관; 임근식; Kim Yong Tae; Kim Seong Il |
| - | Effect of thickness of ferroelectrics and insulators on the memory window of ferroelectric gate capacitors | Sung-Kyun Lee; Kim Yong Tae; KIM CHUN KEUN; Kim Seong Il; 이철의 |
| - | Effects of Bi content on electrical properties of Pt/SrBi//2Nb//2O//9/Si ferroelectric gate structure | Kim Yong Tae; Kim Seong Il; 최훈상; KIM CHUN KEUN; 이창우 |
| - | Effects of Bi content on electrical properties of Pt/SrBi2Nb2O9/Si ferroelectric gate structure | KANG. DONGHOON; 최훈상; 이관; Kim Yong Tae; 이종한; 이건식; Kim Seong Il; 최인훈 |
| - | Effects of hydrogen annealing at the curie temperature on the interface of SrBi//2Nb//2O//9/Si gate structures | 김익수; Kim Yong Tae; Kim Seong Il |
| - | Effects of hydrogen annealing on electrical properties of SrBi//2Nb//2O//9 thin films. | 김익수; Kim Yong Tae; Kim Seong Il; 최인훈 |
| - | Effects of rapid thermal annealing on electrical properties of CBr//4-doped GaAs epilayers grown by atmospheric pressure MOCVD. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; Lee Sang Bae; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Effects of Sr/Bi composition ratio on ferroelectric properties of SrBi//2Bb//2O//9 thin films | Kim Yong Tae; 최훈상; Kim Seong Il; 최인훈 |
| - | EL-MoM5 effects of Bi/Sr stoichiometric ratio on electrical properties of Pt/SrBi2Nb2O9/Si ferroelectric gate structure | Kim Yong Tae; Kim Seong Il; 최인훈; 최훈상; 이창우 |
| - | Electrical and optical properties of quantum wire laser | J. C. Jang; Kim Seong Il; 황승민; KIM HEO JEN; SON CHANG-SIK; J. H. Park; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN |
| - | Electrical properties of carbon-doped GaAs epilayers by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; KIM EUN KYU; MIN BYUNG DON; Min Suk-Ki; 최인훈 |
| - | Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure | 최훈상; Kim Yong Tae; Kim Seong Il; 최인훈; Hoon Sang Choi; Seong Il Kim; In-Hoon Choi |
| - | Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4. | SON CHANG-SIK; 황성민; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki; KIM EUN KYU; KIM YOUN |
| - | Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl//4. | KIM YOUN; KIM MOO SUNG; Kim Seong Il; 황성민; KANG JOON MO; 박양근; Min Suk-Ki |
| - | Epitaxial technology of compound semiconductor by MOCVD. | KIM MOO SUNG; KIM YOUN; EOM KYUNG SOOK; Kim Seong Il; Min Suk-Ki |
| - | Etching effect of carbon tetrabromide in the vertical growth of GaAs during metalorganic chemical vapor deposition | SON CHANG-SIK; PARK YOUNG KYUN; Kim Seong Il |
| - | Fabrication and characterization of delta-doped In0.2Ga0.8As/GaAs quantum wire structures grown by MOCVD using selective area epitaxy | Kim Seong Il; H.H. Tan; C. Jagadish; L.V. Dao; M. Gal |
| - | Fabrication and characterization of triangular shaped InGaAs/GaAs quantum wire structures using selective area epitaxy. | Kim Seong Il; PARK YOUNG KYUN; Kim Yong Tae; H. H. Tan; C. Jagadish |
| - | Fabrication of AlGaAs/GaAs heteroface solar cells | KIM HEO JEN; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; 황성민; 김태환 |
| - | Fabrication of GaAs/AlGaAs DH laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM MOO SUNG |
| - | Fabrication of HEMT employing delta-doping layer grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; 김현수 |
| - | Fabrication of high-efficiency heteroface AlGaAs/GaAs solar cells grown by MOCVD | 황성민; Kim Seong Il; 이달진; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM YOUN |
| - | Fabrication of noble quantum wire structures grown by low pressure MOCVD using selective area epitaxy | Kim Seong Il; Jewon Kim; PARK YOUNG KYUN; Kim Yong Tae |
| - | Fabrication of quantum well high electron mobility transistor grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; K. H. Yoo; G. Ihm; S. K. Noh |
| - | Fabrication of quantum well laser diode grown by MOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim; H. S. Oh |
| - | First-principles calculation of the phonon dispersion curves of silicon | PARK YOUNG KYUN; Kim Seong Il; 이지윤; Min Suk-Ki |
| 1996-06 | Formation of a thin nitrided GaAs layer. | Park Young Ju; KIM EUN KYU; Min Suk-Ki; Kim Seong Il; Han Il Ki; P. O'Keeffe; H. Mutoh; S. Hirose; K. Hara; H. Munekata; H. Kukimoto |
