| - | High performance of W-B-N schottky contact to GaAs | Kim Yong Tae; 이창우; 김동준 |
| - | Improvement in diffusion barrier properties of PECVD W-N thin film by low energy BF2+ implantation | 김동준; Kim Yong Tae; PARK YOUNG KYUN; 심현상; 박종완 |
| - | Improvement in the characteristics of ammonia plasma treated MSQ(Methyl Silsesquioxane) | 심현상; 김동준; KIM CHUN KEUN; Kim Seong Il; Kim Yong Tae; 전형탁 |
| - | Improvement of Memory windows in YMnO₃/Si Ferroelectric gate FET [Invited Paper] | Kim Yong Tae; 김익수; PARK YOUNG KYUN |
| - | Influence of rapid thermal annealing of cerium oxide on the morphological and electrical properties of metal/ferroelectric/insulator/semiconductor capacitor | Ho Nyung Lee; 신동석; Kim Yong Tae; 조성호 |
| - | Influence of rapid thermal annealing of cobalt coatacts to p-GaN | Jewon Kim; PARK YOUNG KYUN; Kim Seong Il; Kim Yong Tae; 최인훈; Akira Yoshida; 김희준 |
| 1999-05 | InGaN epilayer 의 투과 스펙트럼 비교 및 광특성 분석 | Jewon Kim; PARK YOUNG KYUN; Kim Seong Il; Kim Yong Tae; 최인훈; Lee Seock Heon; 이정희 |
| - | Low temperature crystallization of SBT and YMO ferroelectric films by excimer laser irradiation | H. Hiramatsu; T. ITO; Y. Ohki; 설광수; 최인훈; Kim Yong Tae |
| - | Low temperature crystallization of SBT and YMO ferroelectric films by excimer laser irradiation | H. Hiramatsu; T. ITO; Y. Ohki; 설광수; 최인훈; Kim Yong Tae |
| - | Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation | 설광수; Y. Ohki; H. Hiramatsu; 신동석; 최인훈; Kim Yong Tae |
| 1995-01 | New concept for amorphous diffusion barrier: Ion beam modification of metal/semiconductor interface. | Kim Yong Tae; S. K. Kwak; C. S. Kwon; D. J. Kim; C. W. Lee; I. H. Choi; Min Suk-Ki |
| 1996-01 | Nitrogen effects of Ta-Si-N diffusion barrier in Si/Cu metallization. | Kim Yong Tae; S. P. Jeong; D. J. Kim; J. W. Park; Min Suk-Ki |
| 1994-01 | Nitrogen implanted tungsten thin films for Cu diffusion barrier. | Kim Yong Tae; D. J. Kim; C. S. Kwon; I. H. Choi; Min Suk-Ki |
| 1995-01 | Nitrogen ion mixed tungsten thin films for metal-organic chemical vapor deposited Cu metallization. | Kim Yong Tae; 이창우 |
| - | Optical constants of AlGaN grown by molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; 최인훈; PARK YOUNG KYUN; Kim Yong Tae; O. Ambacher; M. Stutzmann |
| - | Optical properties of AlxGa1-xN grown by plasma induced molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; 최인훈; PARK YOUNG KYUN; Kim Yong Tae |
| - | Performance of plasma deposited tungsten nitride diffusion barrier for Al and Au metallizations. | Kim Yong Tae; 이창우; Min Suk-Ki |
| - | Photothermal deflection spectroscopy on InGaN/GaN heterostructures | Jewon Kim; PARK YOUNG KYUN; Kim Yong Tae; SON CHANG-SIK; 최인훈; O. Ambacher; M. Stutzmann |
| 1994-01 | Post annealing characteristics of RF magnetron sputtered PbTiO//3 films. | Kim Yong Tae; H. N. Lee; J. G. Lee; C. S. Kwon; S. H. Choh; Min Suk-Ki |
| - | Pulse plasma enhanced atomic layer deposition of tungsten nitride thin film | Kim Yong Tae |
| - | Pulsed excimer laser annealing effects of ion implanted silicon on insulator. | Kim Seong Il; Min Suk-Ki; KIM EUN KYU; Kim Yong Tae; KIM CHUN KEUN; KIM MOO SUNG |
| - | Relationships among coercive voltage, memory window and electric distribution in ferroelectric gate structure | Sung-Kyun Lee; Kim Yong Tae; Kim Seong Il; 이철의 |
| - | Reliability of Cu/W-N thin films deposited on low dielectric constant SiO:F ILD | 이석형; 김동준; 양성훈; 박정원; 손세일; 오경희; Kim Yong Tae; 박종완 |
| - | Structural and electrical characteristics of ZrO ₂ as a gate dielectric and buffer layer grown by RF magnetron sputtering | 임근식; 최훈상; 이종한; Kim Yong Tae; Kim Seong Il; 최인훈 |
| - | Structural and micromechanical characteristics of low-dielectric organosilicate thin films modified by NH₃ plasma treatment | 차국헌; 주상현; 김수한; 심현상; Kim Yong Tae; 한진희; 이진규; 윤도영 |
| 1996-01 | Study of temperature dependent conductivity of Ta, Ta-Si-N thin films. | Kim Yong Tae; S. P. Jeong; D. J. Kim; H. N. Lee; Min Suk-Ki |
| - | Study on physical properties of Cu-CVD for ULSI interconnects. | Kim Yong Tae; Y. S. Kim; S. K. Kwak; C. S. Kwon; D. G. Jung; Min Suk-Ki |
| - | The changes of the properties of Pt/SrBi2Ta2O9/Pt capacitors and Pt/SrBi2Ta2O9/CeO2/Si structures by post-annealing and their origin | 신동석; 최훈상; Ho Nyung Lee; Kim Yong Tae; PARK YOUNG KYUN; 최인훈 |
| - | The effects of process conditions on the prperties of SiN film in PECVD process. | Kim Yong Tae; C. W. Nam; S. I. Woo |
| - | The effects of various bottom electrodes in MFM structure on the ferroelectric properties of SrBi2Nb2O9 thin films using RF magnetron sputtering | 최훈상; 이종한; 임건식; 강민정; 최인훈; Kim Yong Tae; Kim Seong Il |
