- | Band-gap narrowing in carbon doped GaAs with various substrate orientations studied by photoluminescence spectroscopy | KIM EUN KYU; Min Suk-Ki; S. Cho; D. Lee |
- | Carbon doping characteristics in GaAs grown by LPMOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; C. J. Kim |
- | Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성 |
- | Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations. | SON CHANG-SIK; MIN BYUNG DON; 박만장; 황성민; Kim Seong Il; KIM MOO SUNG; Min Suk-Ki |
- | Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; Min Suk-Ki; KIM MOO SUNG; 최인훈 |
- | Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor deposition | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
- | Characteristics of amorphous Ta-Si-N thin film for Cu metallization | 김동준; 정순필; Kim Yong Tae; Min Suk-Ki; 박종완 |
- | Characteristics of amorphous tungsten nitride diffusion barrier for metal-organic chemical vapor deposited Cu metallization. | Kim Yong Tae; 이창우; 박상규; Min Suk-Ki |
- | Characteristics of C-doped GaAs and critical layer thickness. | Kim Seong Il; EOM KYUNG SOOK; KIM YOUN; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성 |
- | Characteristics of etching for Al//0//.//3Ga//0//.//7As/GaAs multilayer. | Kim Seong Il; Min Suk-Ki; MIN BYUNG DON; KIM MOO SUNG; S. K. Park; C. Lee |
- | Characteristics of GaN micro-crystal formed by the direct reaction of NH//3 with Ga-melt | Park Young Ju; 손맹호; KIM EUN KYU; Min Suk-Ki |
- | Characteristics of laser dry etching for AlGaAs/GaAs multilayer. | Kim Seong Il; Min Suk-Ki; 박세기; MIN BYUNG DON; KIM MOO SUNG; 이천 |
1994-01 | Characteristics of RF magnetron sputtered (Ba, Sr)TiO//3 thin films on RuO//2 bottom electrode. | Kim Yong Tae; J. G. Lee; H. N. Lee; C. S. Kwon; S. H. Choh; Min Suk-Ki |
- | Characteristics of RuOx thin films as a sacrificial diffusion barrier for Cu metallization | Kim Yong Tae; H. S. Yoon; C. S. Kwon; H. N. Lee; J. Jang; Min Suk-Ki |
- | Characterization for GaAs/AlGaAs superlattice grown by LPMOCVD. | Kim Seong Il; Min Suk-Ki; KIM YOUN; KIM MOO SUNG; EOM KYUNG SOOK; CHO HOON YOUNG |
- | Characterization of Mn-center in vertical gradient freeze-GaAs crystals by electron paramagnetic resonance. | KIM EUN KYU; Min Suk-Ki; Y. J. Park; I. W. Park; T. H. Yeom |
1994-01 | Comparison of high temperature thermal stability of Ru and RuO//2 schottky contact to GaAs. | Kim Yong Tae; S. K. Kwak; C. W. Lee; J. G. Lee; C. S. Kwon; K. S. Jung; Min Suk-Ki |
1993-01 | Comparison of plasma deposited tungsten and tungsten nitride schottky contacts to GaAs. | Kim Yong Tae; S. J. Lee; C. S. Kwon; C. W. Lee; Min Suk-Ki |
- | Computer analysis of heteroface AlGaAs/GaAs solar cell | 이대욱; Kim Seong Il; KIM HEO JEN; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN |
- | Control of the lateral growth rate during MOCVD growth on patterned GaAs substrates with CCl//4. | Kim Seong Il; KIM MOO SUNG; Min Suk-Ki; KIM YOUN |
- | Conversion efficiency increase of GaAs solar cell grown on V-grooved GaAs substrate by metalorganc chemical vapor deposition. | SON CHANG-SIK; 박만장; MIN BYUNG DON; 황성민; Kim Seong Il; KIM EUN KYU; Min Suk-Ki |
- | Crystallographic orientation dependence of carbon incorporation into GaAs epilayers | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
- | Crystallographic orientation dependence of carbon incorporationin to GaAs epilayers using CBr ₄ and CCl ₄ | SON CHANG-SIK; Kim Seong Il; KIM YOUN; 황성민; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인철 |
- | Defect states in silicon after laser processing. | Kim Seong Il; Min Suk-Ki; CHOI WON CHEOL; KIM EUN KYU; CHO HOON YOUNG; KIM CHUN KEUN |
- | Direct shrinkage observation of oxidation induced stacking faults in p-type CZ silicon. | Kim Yong Tae; Min Suk-Ki |
- | Direct transport measurements through an ensemble of if InAs self-assembled quantum dots | 정석구; 최범호; KIM SEOK IL; 현찬경; MIN BYUNG DON; 황성우; PARK JEONG HO; KIM YOUN; KIM EUN KYU; Min Suk-Ki |
- | Effect of atomic bond structure on crystal orientation dependence of carbon doping in GaAs grown by MOCVD | PARK YOUNG KYUN; Kim Seong Il; KIM YOUN; SON CHANG-SIK; KIM EUN KYU; Min Suk-Ki |
- | Effect of bottom electrodes on the structural and electrical properties of the ferroelectric lead titanate (PbTiO//3) thin films. | Kim Yong Tae; Ho Nyung Lee; 이정건; 조성호; Min Suk-Ki |
- | Effect of crystallographic orientation on carbon incorporation into GaAs and AlGaAs epilayers grown by metalorganic chemical vapor deposition. | SON CHANG-SIK; Kim Seong Il; Min Suk-Ki; KIM EUN KYU; KIM YOUN; 최인훈 |
1993-01 | Effects of nitrogen on the stress of plasma deposited tungsten and tungsten nitride thin films. | Kim Yong Tae; S. J. Lee; C. S. Kwon; Y. W. Park; C. C. Lee; C. W. Lee; Min Suk-Ki |