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Showing results 1 to 30 of 187

Issue DateTitleAuthor(s)
1988-07(100) 실리콘 기판위에 MOCVD 법으로 성장된 GaAs 에피층의 결정구조 특성 .김용; 김무성; 김현수; 민석기
1998-10A self-assembled silicon quantum dot transistor operating at room temperature최범호; 황성민; I. G. Kim; 신형철; 김용; 김은규
1999-08A silicon self assembled quantum dot transistor operating at room temperature최범호; 황성우; I.G. Kim; 신형철; 김용; 김은규
1998-12A silicon self assembled quantum dot transistor operating at room temperature최범호; 황성우; I.G. Kim; 신형철; 김용; 김은규
1998-09AlGaAs/GaAs heteroface solar cells grown by metalorganic chemical vapor deposition박영균; 김성일; 김용; 김은규; 김용태; 민석기
1999-12Aligned In0.5Ga0.5As quantum dots on laser patterned GaAs substrate박세기; 현찬경; 민병돈; 김효진; 황성민; 김은규; H.K. Lee; 이천; 김용
1997-05Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory박영균; 김성일; 김용; 김은규; 민석기
1997-11Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory박영균; 김성일; 김용; 김은규; 민석기
1998-02Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wellsShu Yuan; 김용; H. H. Tan; C. Jagadish; P. T. Burke; L. V. Dao; M. Gal; M. C. Y. Chan; E. H. Li; J. Zou; D. Q. Cai; D. J. H. Cockayene; R. M. Cohen
1988-10Anomalous conduction band density of state in AlGaAs alloys.김용; 김무성; 민석기
1994-01Atomic force microcopy를 이용한 Al0.5Ga0.5As/GaAs 다층 에피층구조의 단면관찰에 관한 연구김용; 김희진; 김재성; 김무성; 민석기
1992-07Behavior of the two-dimensional electron gas in Si delta-doped GaAs grown by atmospheric MOCVD.김용; 김태환; 김무성; 민석기
1992-01Carbon doping characteristics in GaAs grown by LPMOCVD.김성일; 민석기; 김용; 김무성; 엄경숙; C. J. Kim
1993-01Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD.손창식; 김성일; 김용; 이민석; 김무성; 민석기; 곽명현; 마동성
1994-08Carbon doping characteristics of GaAs and AlGaAs grown by MOCVD using CCl4김용; 김성일; 김무성; 김춘근; 이주천; 민석기
1993-01Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4.손창식; 김성일; 김용; 이민석; 민석기; 김무성; 최인훈
1997-10Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor deposition손창식; 김성일; 김용; 박영균; 김은규; 민석기; 최인훈
1995-12Carrier lifetimes in dielectric disordered GaAs/AlGaAs multiple quantum well with SiN capping layers.김용; 최원준; 이석; 우덕하; 김상국; 김선호; 이정일; 강광남; 추장희; 조규만; S. K. Yu; J. C. Seo; D. Kim
1994-01CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성김용; 손창식; 김성일; 이민석; 김무성; 최인훈; 민석기
1990-01Characteristics of C-doped GaAs and critical layer thickness.김성일; 엄경숙; 김용; 김무성; 민석기; 곽명현; 마동성
1993-01Characteristics of heavily carbon doped GaAs by LPMOCVD and critical layer thickness.김용; 김성일; 엄경숙; 이주천; 곽명현; 마동성; 김무성; 민석기
1991-01Characterization for GaAs/AlGaAs superlattice grown by LPMOCVD.김성일; 민석기; 김용; 김무성; 엄경숙; 조훈영
1991-01Characterization of a MOCVD grown GaAs/AlGaAs superlattice using spectroscopic ellipsometry.김용; 김무성; 김상열; 엄경숙; 민석기
1996-08Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates김성일; 김무성; 김용; 손창식; 황성민; 민병돈; 김은규; 민석기
1995-01Control of the lateral growth rate during MOCVD growth on patterned GaAs substrates with CCl//4.김성일; 김무성; 민석기; 김용
1995-02Cross-sectional observation of NaClO stain-etched AlGaAs/GaAs multilayer by AFM.김용; 김희진; 김재성; 김무성; 민석기
1997-02Crystallographic orientation dependence of carbon incorporation into GaAs epilayers손창식; 김성일; 김용; 박영균; 민병돈; 황성민; 김은규; 민석기; 최인훈
1997-04Crystallographic orientation dependence of carbon incorporationin to GaAs epilayers using CBr ₄ and CCl ₄손창식; 김성일; 김용; 황성민; 박영균; 김은규; 민석기; 최인철
1990-03Deep electron traps in GaAs layers grown on (100)Si substrates by metalorganic chemical vapor deposition.김은규; 조훈영; 김용; 김현수; 조성호; 민석기; J. H. Yoon; M. S. Kim
1990-02Deep levels in GaAs grown on Si during rapid thermal annealing.김용; 조훈영; 김은규; 윤주훈; 조성호; 민석기

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