| 1996-01 | 100 ㎚ electron beam lithography using a modified scanning electron microscope. | 김성일; 민석기; 김은규; 최범호; 황성우; 정석구; 김태근 |
| 1988-07 | (100) 실리콘 기판위에 MOCVD 법으로 성장된 GaAs 에피층의 결정구조 특성 . | 김용; 김무성; 김현수; 민석기 |
| 1996-01 | A formation of carbon micro-pattern by laser-induced deposition with CCl//2F//2 gas. | 김성일; 민석기; 김은규; 박세기; 이천 |
| 1988-03 | A leakage current effect on ICTS spectrum for EL2 levels. | 김은규; 조훈영; 민석기 |
| 1991-01 | A new method to suppress encroachment by plasma deposited tungsten thin films. | 김용태; 민석기; 김충기 |
| 1995-02 | A novel method for the growth of high quality GaAs single crystals. | 박용주; 김은규; 민석기 |
| 1989-10 | A relation between EL2(E//c-0.81eV) and EL6(E//c-0.35eV) in annealed HB-GaAs by hydrogen plasma exposure. | 김은규; 조훈형; 민석기 |
| 1997-02 | A role of hydrogen atom on the formation of nano-crystalline silicon | 최원철; 김은규; 민석기; 박종윤 |
| 1997-01 | A short-period GaAs/AlGaAs quantum-wire array laser with a submicrometer current blocking layer | 김태근; 박경현; 김은규; 민석기; 박정호 |
| 1997-12 | A study of photoluminescence from copper and cerium impurities in silicon films | 김은규; 민석기; 최원철; 박종윤 |
| 1988-01 | A study on the nucleation, growth and shrinkage of oxidation induced stacking faults(OSF), part I: nucleation and thermal behavior of oxidation induced stacking faults. | 김용태; 김춘근; 민석기 |
| 1988-01 | A stydy on the necleation, growth and shrinkage of oxidation induced stacking faults(OSF) | 김용태; 민석기 |
| 1988-05 | Abnormal behavior of midgap electron trap in HB-GaAs during thermal annealing. | 김은규; 민석기; 조훈영 |
| 1998-09 | AlGaAs/GaAs heteroface solar cells grown by metalorganic chemical vapor deposition | 박영균; 김성일; 김용; 김은규; 김용태; 민석기 |
| 1997-04 | Anharmonic decay of phonons in silicon from first-principles calculations | 박영균; 김성일; 민석기 |
| 1997-05 | Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory | 박영균; 김성일; 김용; 김은규; 민석기 |
| 1997-11 | Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory | 박영균; 김성일; 김용; 김은규; 민석기 |
| 1994-01 | Annealing effects on the properties of TiW/WNx bilayer. | 김용태; D. J. Kim; C. S. Kwon; J. W. Park; 민석기 |
| 1988-10 | Anomalous conduction band density of state in AlGaAs alloys. | 김용; 김무성; 민석기 |
| 1995-01 | Application of an axial magnetic field to vertical gradient freeze GaAs single crystal growth. | 박용주; 민석기; 한승호; 윤종규 |
| 1994-01 | Atomic force microcopy를 이용한 Al0.5Ga0.5As/GaAs 다층 에피층구조의 단면관찰에 관한 연구 | 김용; 김희진; 김재성; 김무성; 민석기 |
| 1993-01 | Atomic force microscopic observation in the surface morphologies and roughness of plasma deposited tungsten and tungsten nitride thin films. | 김용태; C. S. Kwon; I. H. Choi; C. W. Lee; 민석기 |
| 1997-09 | Band-gap narrowing in carbon doped GaAs with various substrate orientations studied by photoluminescence spectroscopy | 김은규; 민석기; S. Cho; D. Lee |
| 1992-07 | Behavior of the two-dimensional electron gas in Si delta-doped GaAs grown by atmospheric MOCVD. | 김용; 김태환; 김무성; 민석기 |
| 1989-08 | Behaviour of transition metal tungsten in bulk GaAs crystal | 박용주; 한철원; 심광보; 박승철; 민석기 |
| 1992-01 | Carbon doping characteristics in GaAs grown by LPMOCVD. | 김성일; 민석기; 김용; 김무성; 엄경숙; C. J. Kim |
| 1993-01 | Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD. | 손창식; 김성일; 김용; 이민석; 김무성; 민석기; 곽명현; 마동성 |
| 1994-08 | Carbon doping characteristics of GaAs and AlGaAs grown by MOCVD using CCl4 | 김용; 김성일; 김무성; 김춘근; 이주천; 민석기 |
| 1996-01 | Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations. | 손창식; 민병돈; 박만장; 황성민; 김성일; 김무성; 민석기 |
| 1993-01 | Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4. | 손창식; 김성일; 김용; 이민석; 민석기; 김무성; 최인훈 |
