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Showing results 1 to 30 of 381

Issue DateTitleAuthor(s)
1996-01100 ㎚ electron beam lithography using a modified scanning electron microscope.김성일; 민석기; 김은규; 최범호; 황성우; 정석구; 김태근
1988-07(100) 실리콘 기판위에 MOCVD 법으로 성장된 GaAs 에피층의 결정구조 특성 .김용; 김무성; 김현수; 민석기
1996-01A formation of carbon micro-pattern by laser-induced deposition with CCl//2F//2 gas.김성일; 민석기; 김은규; 박세기; 이천
1988-03A leakage current effect on ICTS spectrum for EL2 levels.김은규; 조훈영; 민석기
1991-01A new method to suppress encroachment by plasma deposited tungsten thin films.김용태; 민석기; 김충기
1995-02A novel method for the growth of high quality GaAs single crystals.박용주; 김은규; 민석기
1989-10A relation between EL2(E//c-0.81eV) and EL6(E//c-0.35eV) in annealed HB-GaAs by hydrogen plasma exposure.김은규; 조훈형; 민석기
1997-02A role of hydrogen atom on the formation of nano-crystalline silicon최원철; 김은규; 민석기; 박종윤
1997-01A short-period GaAs/AlGaAs quantum-wire array laser with a submicrometer current blocking layer김태근; 박경현; 김은규; 민석기; 박정호
1997-12A study of photoluminescence from copper and cerium impurities in silicon films김은규; 민석기; 최원철; 박종윤
1988-01A study on the nucleation, growth and shrinkage of oxidation induced stacking faults(OSF), part I: nucleation and thermal behavior of oxidation induced stacking faults.김용태; 김춘근; 민석기
1988-01A stydy on the necleation, growth and shrinkage of oxidation induced stacking faults(OSF)김용태; 민석기
1988-05Abnormal behavior of midgap electron trap in HB-GaAs during thermal annealing.김은규; 민석기; 조훈영
1998-09AlGaAs/GaAs heteroface solar cells grown by metalorganic chemical vapor deposition박영균; 김성일; 김용; 김은규; 김용태; 민석기
1997-04Anharmonic decay of phonons in silicon from first-principles calculations박영균; 김성일; 민석기
1997-05Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory박영균; 김성일; 김용; 김은규; 민석기
1997-11Anharmonic decay of phonons in silicon from third-order density-functional perturbation theory박영균; 김성일; 김용; 김은규; 민석기
1994-01Annealing effects on the properties of TiW/WNx bilayer.김용태; D. J. Kim; C. S. Kwon; J. W. Park; 민석기
1988-10Anomalous conduction band density of state in AlGaAs alloys.김용; 김무성; 민석기
1995-01Application of an axial magnetic field to vertical gradient freeze GaAs single crystal growth.박용주; 민석기; 한승호; 윤종규
1994-01Atomic force microcopy를 이용한 Al0.5Ga0.5As/GaAs 다층 에피층구조의 단면관찰에 관한 연구김용; 김희진; 김재성; 김무성; 민석기
1993-01Atomic force microscopic observation in the surface morphologies and roughness of plasma deposited tungsten and tungsten nitride thin films.김용태; C. S. Kwon; I. H. Choi; C. W. Lee; 민석기
1997-09Band-gap narrowing in carbon doped GaAs with various substrate orientations studied by photoluminescence spectroscopy김은규; 민석기; S. Cho; D. Lee
1992-07Behavior of the two-dimensional electron gas in Si delta-doped GaAs grown by atmospheric MOCVD.김용; 김태환; 김무성; 민석기
1989-08Behaviour of transition metal tungsten in bulk GaAs crystal박용주; 한철원; 심광보; 박승철; 민석기
1992-01Carbon doping characteristics in GaAs grown by LPMOCVD.김성일; 민석기; 김용; 김무성; 엄경숙; C. J. Kim
1993-01Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD.손창식; 김성일; 김용; 이민석; 김무성; 민석기; 곽명현; 마동성
1994-08Carbon doping characteristics of GaAs and AlGaAs grown by MOCVD using CCl4김용; 김성일; 김무성; 김춘근; 이주천; 민석기
1996-01Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations.손창식; 민병돈; 박만장; 황성민; 김성일; 김무성; 민석기
1993-01Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4.손창식; 김성일; 김용; 이민석; 민석기; 김무성; 최인훈