Showing results 1 to 30 of 49
Issue Date | Title | Author(s) |
---|---|---|
- | A Material Development Toward Long Cyclic Super-resolution Readout and Writing | CHEONG, BYUNG KI; Lee Hyun Seok; LEE, TAEK SUNG; LEE, KYEONG SEOK; KIM, WON MOK; LEE, JAE WON; CHO, SUNG HO |
- | A Study on the Temperature Dependence of the Threshold Switching Characteristics of Ge2Sb2Te5 | Lee Suyoun; Jeong, Doo Seok; Jeung-hyun Jeong; Wu Zhe; Park Young-wook; Hyung-Woo Ahn; CHEONG, BYUNG KI |
- | An Experimental Analysis of the Thermo-optic Characteristics of PbTe Thin Films by a Real Time Electrical-Optical Characterization | Lee Hyun Seok; LEE, TAEK SUNG; Jeung-hyun Jeong; Dae-Hwan Kang; D.H.Kim; CHEONG, BYUNG KI |
- | An experimental investigation on the origin of super-resolution effects of Te-based chalcogenide semiconducting thin films | Lee Hyun Seok; LEE, TAEK SUNG; Jeung-hyun Jeong; Dae-Hwan Kang; KIM, WON MOK; Donghwan Kim; CHEONG, BYUNG KI |
- | An NSOM measurement of the near-field intensity profile of transmitted light due to a PbTe thin film material for super-resolution optical memory | LEE, TAEK SUNG; Lee Hyun Seok; Jeung-hyun Jeong; Dae-Hwan Kang; KIM, WON MOK; S.T.Whang; K.M.Cho; CHEONG, BYUNG KI |
- | Analysis of the Optical Near-field due to PbTe Thin Films for Super-resolution Optical Memory | LEE, TAEK SUNG; Lee Hyun Seok; KIM, WON MOK; CHEONG, BYUNG KI; Young Kyu Park; Kyuman Cho; Django Lee; Seok Joo Byun |
- | Annealing effect of Zn-Sn-O films deposited using combinatorial method | KO JI HOON; Kim In-ho; 김동환; LEE, KYEONG SEOK; JONG-KEUK, PARK; LEE, TAEK SUNG; Baik, Young Joon; CHEONG, BYUNG KI; KIM, WON MOK |
- | Characteristics of phase change memory devices based on Ge-doped SbTe and its derivative | CHEONG, BYUNG KI; Jeung-hyun Jeong; Lee Suyoun; Kim Inho; Wu Zhe; Ahn Hyoung Woo; Kim Seul-Cham; LEE HYUN SUCK; Park Young-wook |
- | Characterization of interface between amorphous Ge2Sb2Te5 and TiN by x-ray photoelectron spectroscopy | Jeong, Doo Seok; Lee Suyoun; Jeung-hyun Jeong; CHEONG, BYUNG KI; Cheol Seong Hwang |
- | Characterization of Superresolution Effects of Te-based Chalcogenide Thin Films at Blue Light Regime | Lee Hyun Seok; LEE, TAEK SUNG; Choi Jihoon; Lee Suyoun; KIM, WON MOK; Kim, Donghwan; CHEONG, BYUNG KI |
- | Characterization of the super-resolution effects of PbTe thin films | Lee Hyun Seok; LEE, TAEK SUNG; Jeung-hyun Jeong; Dae-Hwan Kang; KIM, WON MOK; Donghwan Kim; CHEONG, BYUNG KI |
- | Conductive Oxide Interlayer between Phase Change Materials and Bottom Electrode in PRAM | Hyun-Goo Jun; Dongbok Lee; CHEONG, BYUNG KI; Ki-Bum Kim |
- | Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic Programming | Lee Suyoun; Jeung-hyun Jeong; Park Young-wook; Wu Zhe; LEE, TAEK SUNG; CHEONG, BYUNG KI |
- | Demonstration of a high-speed multi-level cell phase-change memory using Ge-doped SbTe | Zang Gang; Wu Zhe; Park Young Wook; Jeung-hyun Jeong; Jeong, Doo Seok; Yoo, Won Jong; CHEONG, BYUNG KI |
- | Device Characteristics of Ge-doped SbTe Material System for Phase Change Random Access Memory | Jeung-hyun Jeong; Lee Suyoun; Wu Zhe; LEE, TAEK SUNG; KIM, WON MOK; Kim Seul-Cham; Kyu Hwan Oh; CHEONG, BYUNG KI |
- | Dielectric confinement and surface plasmon damping in Au:semiconductor nanocomposite thin films | LEE, KYEONG SEOK; Kim In-ho; LEE, TAEK SUNG; CHEONG, BYUNG KI; KIM, WON MOK; park, jong geon; HA, JAE GEUN |
- | Effect of deposition temperature and Ga content on the properties of Ga-doped ZnO films | Son Ju Myeong; Kim Yong Hyun; LEE, TAEK SUNG; CHEONG, BYUNG KI; Jeung-hyun Jeong; D.Y. Jeong; T.-Y. Seong; KIM, WON MOK |
- | Effect of the addition of Zn metal on the electrical properties of F doped ZnO films | Ku Dae Young; Kim In-ho; LEE, KYEONG SEOK; LEE, TAEK SUNG; CHEONG, BYUNG KI; Baik, Young Joon; KIM, WON MOK |
- | Electrical, optical and structural properties of transparent and conducting ZnO thin films doped with Al and F by rf magnetron sputter | 최병국; Kim In-ho; D.H. Kim; LEE, KYEONG SEOK; LEE, TAEK SUNG; CHEONG, BYUNG KI; Baik, Young Joon; KIM, WON MOK |
- | Energetics of hexagonal Ge2Sb2Te5 doped with nitrogen or oxygen by ab-initio calculations | Kim, Sae-Jin; Jung-Hae Choi; Seung-Cheol Lee; CHEONG, BYUNG KI; 박찬 |
- | Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode | Dae-Hwan Kang; Kim Inho; Jeung-hyun Jeong; CHEONG, BYUNG KI; Dong-Ho Ahn; Ki-Bum Kim |
- | Enhanced Thermal Efficiency of Ge2Sb2Te5 Phase Change Flims Using the Microstructure Modification | Dongbok Lee; Ho-ki Lyeo; Lee Hyun Seok; Hyun-Goo Jun; CHEONG, BYUNG KI; Ki-Bum Kim |
- | Fast and versatile memory behavior of phase change memory with (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x chalcogenide alloy and its kinetic characteristics | Dong-Ho Ahn; Tae-Yon Lee; Hyungoo Jun; Dongbok Lee; Dae-Hwan Kang; Jeung-hyun Jeong; CHEONG, BYUNG KI; Ki-Bum Kim |
- | Fluorine doping effect of ZnO film by RF magnetron sputtering | Ku Dae Young; Kim In-ho; 이인규; LEE, KYEONG SEOK; JONG-KEUK, PARK; LEE, TAEK SUNG; Baik, Young Joon; CHEONG, BYUNG KI; KIM, WON MOK |
- | Improved Superresolution Readout by Nitrogen Addition in Ge-doped SbTe | LEE, TAEK SUNG; Lee Hyun Seok; Choi Jihoon; Lee Suyoun; KIM, WON MOK; Kim, Jooho; CHEONG, BYUNG KI |
- | Improved Temperature Dependence of Phase Change Memory Device Using Ge-doped SbTe | Wu Zhe; Park Young Wook; Hyung-Woo Ahn; Lee Suyoun; Jeung-hyun Jeong; Jeong, Doo Seok; Kwangsoo No; CHEONG, BYUNG KI |
- | Improvement of the thermal stability of Al doped ZnO films | Kim In-ho; Ku Dae Young; KO JI HOON; LEE, KYEONG SEOK; LEE, TAEK SUNG; CHEONG, BYUNG KI; Baik, Young Joon; KIM, WON MOK |
- | Investigation on the enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode | Dae-Hwan Kang; Kim Inho; Jeung-hyun Jeong; CHEONG, BYUNG KI; Dong-Ho Ahn; Dongbok Lee; Hyun-Mi Kim; Ki-Bum Kim |
- | Investigation on the improved superresolution effect by nitorgen addition in Ge-doped SbTe | Lee Hyun Seok; LEE, TAEK SUNG; Choi Jihoon; Lee Suyoun; KIM, WON MOK; CHEONG, BYUNG KI |
- | Material and Device Characteristics of Ge-doped SbTe-N Phase Change Memory Material | Wu Zhe; Lee Suyoun; Jeung-hyun Jeong; Kim Inho; Kim Seul-Cham; Kyu Hwan Oh; CHEONG, BYUNG KI |