Browsing byAuthorCHEONG, BYUNG KI

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Showing results 1 to 30 of 49

Issue DateTitleAuthor(s)
-A Material Development Toward Long Cyclic Super-resolution Readout and WritingCHEONG, BYUNG KI; Lee Hyun Seok; LEE, TAEK SUNG; LEE, KYEONG SEOK; KIM, WON MOK; LEE, JAE WON; CHO, SUNG HO
-A Study on the Temperature Dependence of the Threshold Switching Characteristics of Ge2Sb2Te5Lee Suyoun; Jeong, Doo Seok; Jeung-hyun Jeong; Wu Zhe; Park Young-wook; Hyung-Woo Ahn; CHEONG, BYUNG KI
-An Experimental Analysis of the Thermo-optic Characteristics of PbTe Thin Films by a Real Time Electrical-Optical CharacterizationLee Hyun Seok; LEE, TAEK SUNG; Jeung-hyun Jeong; Dae-Hwan Kang; D.H.Kim; CHEONG, BYUNG KI
-An experimental investigation on the origin of super-resolution effects of Te-based chalcogenide semiconducting thin filmsLee Hyun Seok; LEE, TAEK SUNG; Jeung-hyun Jeong; Dae-Hwan Kang; KIM, WON MOK; Donghwan Kim; CHEONG, BYUNG KI
-An NSOM measurement of the near-field intensity profile of transmitted light due to a PbTe thin film material for super-resolution optical memoryLEE, TAEK SUNG; Lee Hyun Seok; Jeung-hyun Jeong; Dae-Hwan Kang; KIM, WON MOK; S.T.Whang; K.M.Cho; CHEONG, BYUNG KI
-Analysis of the Optical Near-field due to PbTe Thin Films for Super-resolution Optical MemoryLEE, TAEK SUNG; Lee Hyun Seok; KIM, WON MOK; CHEONG, BYUNG KI; Young Kyu Park; Kyuman Cho; Django Lee; Seok Joo Byun
-Annealing effect of Zn-Sn-O films deposited using combinatorial methodKO JI HOON; Kim In-ho; 김동환; LEE, KYEONG SEOK; JONG-KEUK, PARK; LEE, TAEK SUNG; Baik, Young Joon; CHEONG, BYUNG KI; KIM, WON MOK
-Characteristics of phase change memory devices based on Ge-doped SbTe and its derivativeCHEONG, BYUNG KI; Jeung-hyun Jeong; Lee Suyoun; Kim Inho; Wu Zhe; Ahn Hyoung Woo; Kim Seul-Cham; LEE HYUN SUCK; Park Young-wook
-Characterization of interface between amorphous Ge2Sb2Te5 and TiN by x-ray photoelectron spectroscopyJeong, Doo Seok; Lee Suyoun; Jeung-hyun Jeong; CHEONG, BYUNG KI; Cheol Seong Hwang
-Characterization of Superresolution Effects of Te-based Chalcogenide Thin Films at Blue Light RegimeLee Hyun Seok; LEE, TAEK SUNG; Choi Jihoon; Lee Suyoun; KIM, WON MOK; Kim, Donghwan; CHEONG, BYUNG KI
-Characterization of the super-resolution effects of PbTe thin filmsLee Hyun Seok; LEE, TAEK SUNG; Jeung-hyun Jeong; Dae-Hwan Kang; KIM, WON MOK; Donghwan Kim; CHEONG, BYUNG KI
-Conductive Oxide Interlayer between Phase Change Materials and Bottom Electrode in PRAMHyun-Goo Jun; Dongbok Lee; CHEONG, BYUNG KI; Ki-Bum Kim
-Degradation Mechanism and Curing Method of Phase Change Memory (PCM) Device Characteristics during Cyclic ProgrammingLee Suyoun; Jeung-hyun Jeong; Park Young-wook; Wu Zhe; LEE, TAEK SUNG; CHEONG, BYUNG KI
-Demonstration of a high-speed multi-level cell phase-change memory using Ge-doped SbTeZang Gang; Wu Zhe; Park Young Wook; Jeung-hyun Jeong; Jeong, Doo Seok; Yoo, Won Jong; CHEONG, BYUNG KI
-Device Characteristics of Ge-doped SbTe Material System for Phase Change Random Access MemoryJeung-hyun Jeong; Lee Suyoun; Wu Zhe; LEE, TAEK SUNG; KIM, WON MOK; Kim Seul-Cham; Kyu Hwan Oh; CHEONG, BYUNG KI
-Dielectric confinement and surface plasmon damping in Au:semiconductor nanocomposite thin filmsLEE, KYEONG SEOK; Kim In-ho; LEE, TAEK SUNG; CHEONG, BYUNG KI; KIM, WON MOK; park, jong geon; HA, JAE GEUN
-Effect of deposition temperature and Ga content on the properties of Ga-doped ZnO filmsSon Ju Myeong; Kim Yong Hyun; LEE, TAEK SUNG; CHEONG, BYUNG KI; Jeung-hyun Jeong; D.Y. Jeong; T.-Y. Seong; KIM, WON MOK
-Effect of the addition of Zn metal on the electrical properties of F doped ZnO filmsKu Dae Young; Kim In-ho; LEE, KYEONG SEOK; LEE, TAEK SUNG; CHEONG, BYUNG KI; Baik, Young Joon; KIM, WON MOK
-Electrical, optical and structural properties of transparent and conducting ZnO thin films doped with Al and F by rf magnetron sputter최병국; Kim In-ho; D.H. Kim; LEE, KYEONG SEOK; LEE, TAEK SUNG; CHEONG, BYUNG KI; Baik, Young Joon; KIM, WON MOK
-Energetics of hexagonal Ge2Sb2Te5 doped with nitrogen or oxygen by ab-initio calculationsKim, Sae-Jin; Jung-Hae Choi; Seung-Cheol Lee; CHEONG, BYUNG KI; 박찬
-Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrodeDae-Hwan Kang; Kim Inho; Jeung-hyun Jeong; CHEONG, BYUNG KI; Dong-Ho Ahn; Ki-Bum Kim
-Enhanced Thermal Efficiency of Ge2Sb2Te5 Phase Change Flims Using the Microstructure ModificationDongbok Lee; Ho-ki Lyeo; Lee Hyun Seok; Hyun-Goo Jun; CHEONG, BYUNG KI; Ki-Bum Kim
-Fast and versatile memory behavior of phase change memory with (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x chalcogenide alloy and its kinetic characteristicsDong-Ho Ahn; Tae-Yon Lee; Hyungoo Jun; Dongbok Lee; Dae-Hwan Kang; Jeung-hyun Jeong; CHEONG, BYUNG KI; Ki-Bum Kim
-Fluorine doping effect of ZnO film by RF magnetron sputteringKu Dae Young; Kim In-ho; 이인규; LEE, KYEONG SEOK; JONG-KEUK, PARK; LEE, TAEK SUNG; Baik, Young Joon; CHEONG, BYUNG KI; KIM, WON MOK
-Improved Superresolution Readout by Nitrogen Addition in Ge-doped SbTeLEE, TAEK SUNG; Lee Hyun Seok; Choi Jihoon; Lee Suyoun; KIM, WON MOK; Kim, Jooho; CHEONG, BYUNG KI
-Improved Temperature Dependence of Phase Change Memory Device Using Ge-doped SbTeWu Zhe; Park Young Wook; Hyung-Woo Ahn; Lee Suyoun; Jeung-hyun Jeong; Jeong, Doo Seok; Kwangsoo No; CHEONG, BYUNG KI
-Improvement of the thermal stability of Al doped ZnO filmsKim In-ho; Ku Dae Young; KO JI HOON; LEE, KYEONG SEOK; LEE, TAEK SUNG; CHEONG, BYUNG KI; Baik, Young Joon; KIM, WON MOK
-Investigation on the enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrodeDae-Hwan Kang; Kim Inho; Jeung-hyun Jeong; CHEONG, BYUNG KI; Dong-Ho Ahn; Dongbok Lee; Hyun-Mi Kim; Ki-Bum Kim
-Investigation on the improved superresolution effect by nitorgen addition in Ge-doped SbTeLee Hyun Seok; LEE, TAEK SUNG; Choi Jihoon; Lee Suyoun; KIM, WON MOK; CHEONG, BYUNG KI
-Material and Device Characteristics of Ge-doped SbTe-N Phase Change Memory MaterialWu Zhe; Lee Suyoun; Jeung-hyun Jeong; Kim Inho; Kim Seul-Cham; Kyu Hwan Oh; CHEONG, BYUNG KI

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