| 2001-12 | A fabrication and characterizations of high quality VOx thin films through post annealing of VOx/V/VOx multi-layer for uncooled IR detectors | 한용희; 문성욱; 최인훈 |
| 2001-07 | A new ferroelectric gate structure for low power operation of non volatile memory devices | 김용태; 심선일; 김성일; 최훈상; 최인훈; Makoto Ishida |
| 1987-01 | A study of Au-Ge/Ag/Au ohmic contact on n-type (100) GaAs epi-wafer. | 강광남; 권철순; 최인훈; 김무성; 정지채 |
| 1991-01 | A study on the active layer dissolution of InP/InGaAsP/InP DH structure for 1.55㎛ long-wavelength grown by liquid phase epitaxy | 서상희; 김을락; 곽노정; 최인훈 |
| 1993-01 | A study on the growth and characteristics of LPE Cd0.94Zn0.06Te | 서상희; 곽노정; 최인훈; 임성욱 |
| 1991-01 | A study on the LPE growth of InP/GaInAsP and its lasing wavelength. | 서상희; 이경구; 전준범; 이용탁; 최인훈; 박찬용 |
| 1998-10 | Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy | 김제원; 손창식; 심선일; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann |
| 2000-07 | Achievment of high memory window of YMnO3/Si gate by thermal treatment in nitrogen ambient | 김익수; 최재형; 김용태; 최인훈 |
| 1999-04 | Atomic force microscopy study and absorption properties of epitaxial AlxGa1-xN | 김제원; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann |
| 1996-11 | Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD | 임동섭; 변동진; 김긍호; 남옥현; 최인훈; 박달근; 금동화 |
| 1998-10 | Auger electron microscopy study of AlGaN grown by molecular beam epitaxy | 김제원; 손창식; 박영균; 김용태; 최인훈 |
| 2006-02 | Blue-Shift of an InGaAs-InP Quantum-Well Structure by As and H Ion Irradiation | 이종한; 최인훈; 신상원; 황정남; 변영태; 최경선; 김태곤; 송종한 |
| 1993-01 | Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4. | 손창식; 김성일; 김용; 이민석; 민석기; 김무성; 최인훈 |
| 1997-10 | Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor deposition | 손창식; 김성일; 김용; 박영균; 김은규; 민석기; 최인훈 |
| 1996-07 | CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질 | 손창식; 김성일; 민병돈; 김은규; 민석기; 최인훈 |
| 1994-01 | CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성 | 김용; 손창식; 김성일; 이민석; 김무성; 최인훈; 민석기 |
| 1999-05 | Characteristic absorbance of AlGaN epilayers grown on sapphire substrate | 김제원; 박영균; 김용태; 최인훈 |
| 2000-12 | Characteristics of carbon incorporated BN films deposited by radio frequency PACVD | 김홍석; 최인훈; 백영준 |
| 1999-03 | Characteristics of SrTa2Bi2O9 thin films grown by MOCVD using a new strontium tantalum ethoxide (Sr[Ta(OEt)6]2) source | 김용태; 박영균; 신동석; 최훈상; 최인훈 |
| 2000-01 | Characteristics of the crystal structure and electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si structure | 최훈상; 김은홍; 김용태; 최인훈 |
| 2004-03 | Characteristics of Vanadium-tungsten-oxide bolometric thin films for Uncooled Infrared Detector | 한용희; 김근태; 뉴엔치엔; 신현준; 최인훈; 문성욱 |
| 2004-12 | Characteristics of Vanadium-Tungsten-Oxide Bolometric Thin Films for Uncooled IR Detectors | 한용희; 최인훈; 문성욱; 손창식 |
| 1999-07 | Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy | 김제원; 손창식; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann |
| 2004-04 | Characterizations of vanadium-tungsten-oxide bolometric thin films for uncooled IR detectors | 한용희; 문성욱; 신현준; 김신근; 안미숙; 김근태; 최인훈; 오명환 |
| 1997-08 | Comparison in electrical properties SrBi//2Ta//2O//9/CeO//2/Si and SrBi//2Ta//2O//9/Si structures | 신동석; 김용태; 이호녕; 이창우; 최인훈 |
| 1994-01 | Comparison of amorphous and polycrystalline tungsten nitride diffusion barrier for MOCVD-Cu metallization. | 김용태; 권철순; 김동준; 이창우; 최인훈 |
| 2001-06 | Correlation between charge injection and memory window in the ferroelectric gate stack structures | 이성균; 최인훈; 이철의; 김용태; 김춘근 |
| 2002-08 | Crystal structure and electrical properties Pt/SrBi2Nb2O9/ZrO2/Si ferroelectric gate structure | 최훈상; 임건식; 이종한; 김용태; 김성일; 최인훈 |
| 2001-07 | Crystal structure and electrical properties Pt/SrBi2Ta2O9/ZrO2/Si | 최훈상; 김은홍; 최인훈; 김용태; 최재형; 이정용 |
| 2002-12 | Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD. | 손창식; 조신호; 최인훈; 김성일; 김용태; 정상욱 |
