Browsing by Author 최인훈

Jump to:
All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
  • Sort by:
  • In order:
  • Results/Page
  • Authors/Record:

Showing results 1 to 30 of 164

Issue DateTitleAuthor(s)
2001-12A fabrication and characterizations of high quality VOx thin films through post annealing of VOx/V/VOx multi-layer for uncooled IR detectors한용희; 문성욱; 최인훈
2001-07A new ferroelectric gate structure for low power operation of non volatile memory devices김용태; 심선일; 김성일; 최훈상; 최인훈; Makoto Ishida
1987-01A study of Au-Ge/Ag/Au ohmic contact on n-type (100) GaAs epi-wafer.강광남; 권철순; 최인훈; 김무성; 정지채
1991-01A study on the active layer dissolution of InP/InGaAsP/InP DH structure for 1.55㎛ long-wavelength grown by liquid phase epitaxy서상희; 김을락; 곽노정; 최인훈
1993-01A study on the growth and characteristics of LPE Cd0.94Zn0.06Te서상희; 곽노정; 최인훈; 임성욱
1991-01A study on the LPE growth of InP/GaInAsP and its lasing wavelength.서상희; 이경구; 전준범; 이용탁; 최인훈; 박찬용
1998-10Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy김제원; 손창식; 심선일; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann
2000-07Achievment of high memory window of YMnO3/Si gate by thermal treatment in nitrogen ambient김익수; 최재형; 김용태; 최인훈
1999-04Atomic force microscopy study and absorption properties of epitaxial AlxGa1-xN김제원; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann
1996-11Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD임동섭; 변동진; 김긍호; 남옥현; 최인훈; 박달근; 금동화
1998-10Auger electron microscopy study of AlGaN grown by molecular beam epitaxy김제원; 손창식; 박영균; 김용태; 최인훈
2006-02Blue-Shift of an InGaAs-InP Quantum-Well Structure by As and H Ion Irradiation이종한; 최인훈; 신상원; 황정남; 변영태; 최경선; 김태곤; 송종한
1993-01Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4.손창식; 김성일; 김용; 이민석; 민석기; 김무성; 최인훈
1997-10Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor deposition손창식; 김성일; 김용; 박영균; 김은규; 민석기; 최인훈
1996-07CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질손창식; 김성일; 민병돈; 김은규; 민석기; 최인훈
1994-01CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성김용; 손창식; 김성일; 이민석; 김무성; 최인훈; 민석기
1999-05Characteristic absorbance of AlGaN epilayers grown on sapphire substrate김제원; 박영균; 김용태; 최인훈
2000-12Characteristics of carbon incorporated BN films deposited by radio frequency PACVD김홍석; 최인훈; 백영준
1999-03Characteristics of SrTa2Bi2O9 thin films grown by MOCVD using a new strontium tantalum ethoxide (Sr[Ta(OEt)6]2) source김용태; 박영균; 신동석; 최훈상; 최인훈
2000-01Characteristics of the crystal structure and electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si structure최훈상; 김은홍; 김용태; 최인훈
2004-03Characteristics of Vanadium-tungsten-oxide bolometric thin films for Uncooled Infrared Detector한용희; 김근태; 뉴엔치엔; 신현준; 최인훈; 문성욱
2004-12Characteristics of Vanadium-Tungsten-Oxide Bolometric Thin Films for Uncooled IR Detectors한용희; 최인훈; 문성욱; 손창식
1999-07Characterization of the absorption edges of epitaxial AlGaN grown by plasma-induced molecular beam epitaxy김제원; 손창식; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann
2004-04Characterizations of vanadium-tungsten-oxide bolometric thin films for uncooled IR detectors한용희; 문성욱; 신현준; 김신근; 안미숙; 김근태; 최인훈; 오명환
1997-08Comparison in electrical properties SrBi//2Ta//2O//9/CeO//2/Si and SrBi//2Ta//2O//9/Si structures신동석; 김용태; 이호녕; 이창우; 최인훈
1994-01Comparison of amorphous and polycrystalline tungsten nitride diffusion barrier for MOCVD-Cu metallization.김용태; 권철순; 김동준; 이창우; 최인훈
2001-06Correlation between charge injection and memory window in the ferroelectric gate stack structures이성균; 최인훈; 이철의; 김용태; 김춘근
2002-08Crystal structure and electrical properties Pt/SrBi2Nb2O9/ZrO2/Si ferroelectric gate structure최훈상; 임건식; 이종한; 김용태; 김성일; 최인훈
2001-07Crystal structure and electrical properties Pt/SrBi2Ta2O9/ZrO2/Si최훈상; 김은홍; 최인훈; 김용태; 최재형; 이정용
2002-12Crystallographic orientation dependence of carbon incorporation in atmospheric and low pressure MOCVD.손창식; 조신호; 최인훈; 김성일; 김용태; 정상욱