| - | A fabrication and characterizations of high quality VOx thin films through post annealing of VOx/V/VOx multi-layer for uncooled IR detectors | 한용희; Moon Sung Wook; 최인훈 |
| - | A new ferroelectric gate structure for low power operation of non volatile memory devices | Kim Yong Tae; 심선일; Kim Seong Il; 최훈상; 최인훈; Makoto Ishida |
| 1987-01 | A study of Au-Ge/Ag/Au ohmic contact on n-type (100) GaAs epi-wafer. | 강광남; 권철순; 최인훈; 김무성; 정지채 |
| 1991-01 | A study on the active layer dissolution of InP/InGaAsP/InP DH structure for 1.55㎛ long-wavelength grown by liquid phase epitaxy | 서상희; 김을락; 곽노정; 최인훈 |
| 1993-01 | A study on the growth and characteristics of LPE Cd0.94Zn0.06Te | 서상희; 곽노정; 최인훈; 임성욱 |
| 1991-01 | A study on the LPE growth of InP/GaInAsP and its lasing wavelength. | 서상희; 이경구; 전준범; 이용탁; 최인훈; 박찬용 |
| - | Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; 심선일; 최인훈; PARK YOUNG KYUN; Kim Yong Tae; O. Ambacher; M. Stutzmann |
| - | Achievment of high memory window of YMnO3/Si gate by thermal treatment in nitrogen ambient | 김익수; 최재형; Kim, Yong Tae; 최인훈 |
| - | Atomic force microscopy study and absorption properties of epitaxial AlxGa1-xN | Jewon Kim; 최인훈; PARK YOUNG KYUN; Kim Yong Tae; O. Ambacher; M. Stutzmann |
| - | Atomic force microscopy study of GaN-buffer layers on SiC(0001) by MOCVD | 임동섭; Byun Dongjin; Kim Gyeung Ho; Nam Ok-Hyun; 최인훈; Park Dal keun; Kum Dong Wha |
| - | Auger electron microscopy study of AlGaN grown by molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; PARK YOUNG KYUN; Kim Yong Tae; 최인훈 |
| - | Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; Min Suk-Ki; KIM MOO SUNG; 최인훈 |
| - | Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor deposition | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| 1996-07 | CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질 | 손창식; 김성일; 민병돈; 김은규; 민석기; 최인훈 |
| 1994-01 | CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성 | 김용; 손창식; 김성일; 이민석; 김무성; 최인훈; 민석기 |
| - | Characteristics of SrTa2Bi2O9 thin films grown by MOCVD using a new strontium tantalum ethoxide (Sr[Ta(OEt)6]2) source | Kim Yong Tae; PARK YOUNG KYUN; 신동석; 최훈상; 최인훈 |
| - | Characteristics of the crystal structure and electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si structure | 최훈상; 김은홍; Kim Yong Tae; 최인훈 |
| - | Characterizations of vanadium-tungsten-oxide bolometric thin films for uncooled IR detectors | HAN YONG HEE; Moon, Sung Wook; Shin, Hyun Joon; Kim, Shin Keun; An Mi Suk; 김근태; 최인훈; 오명환 |
| - | Comparison in electrical properties SrBi//2Ta//2O//9/CeO//2/Si and SrBi//2Ta//2O//9/Si structures | 신동석; Kim Yong Tae; Ho Nyung Lee; 이창우; 최인훈 |
| - | Comparison of amorphous and polycrystalline tungsten nitride diffusion barrier for MOCVD-Cu metallization. | Kim Yong Tae; 권철순; 김동준; 이창우; 최인훈 |
| - | Correlation between charge injection and memory window in the ferroelectric gate stack structures | Sung-Kyun Lee; 최인훈; 이철의; Kim Yong Tae; KIM CHUN KEUN |
| - | Crystal structure and electrical properties Pt/SrBi2Nb2O9/ZrO2/Si ferroelectric gate structure | 최훈상; 임건식; 이종한; Kim Yong Tae; Kim Seong Il; 최인훈 |
| - | Crystallographic orientation dependence of carbon incorporation into GaAs epilayers | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Defects in GaN films on SiC(0001) with GaN buffer layers by MOCVD. | Byun Dongjin; Kum Dong Wha; Kim Gyeung Ho; Park Dal keun; 임동섭; 최인훈 |
| 1997-05 | Dependence of the electrical properties of carbon-doped GaAs and AlGaAs epilayers on the surface crystallographica orientation | 손창식; 박영균; 이승백; 김용; 김은규; 최인훈; 김성일; 민석기 |
| - | Effect of crystallographic orientation on carbon incorporation into GaAs and AlGaAs epilayers grown by metalorganic chemical vapor deposition. | SON CHANG-SIK; Kim Seong Il; Min Suk-Ki; KIM EUN KYU; KIM YOUN; 최인훈 |
| 1991-01 | Effect of misorientation of(111) CdTe substrate on the surface morphology of Hg0.7Cd0.3Te grown by an LPE process. | 서상희; 곽노정; 임성욱; 김재묵; 최인훈 |
| - | Effect of rapid thermal annealing on the memory window of ferroelectric YMnO3 thin films deposited on Si substrates | 김익수; Ho Nyung Lee; Kim Yong Tae; 최인훈 |
| 1992-01 | Effect of the DeTe/DmCd mole ratio on the surface morphology of MOVPE grown CdTe/GaAs epi layer. | 서상희; 송원준; 최인훈 |
| 1988-01 | Effect of the growth rate on the dislocation density and distribution of CdTe single crystals grown by a vertical bridgman method. | 서상희; 송원준; 임성욱; 최인훈; 김재묵 |
