| - | A study for the facet evolution of CCl4-doped Al0.5Ga0.5As/GaAs multilayers grown on patterned GaAs substrates by metalorganic chemical vapor deposition | KIM HEO JEN; SON CHANG-SIK; PARK YOUNG KYUN; KIM EUN KYU; 김태환 |
| - | Absorption properties of the epitaxial Alx-Ga1-xN grown by plasma induced molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; 심선일; 최인훈; PARK YOUNG KYUN; Kim Yong Tae; O. Ambacher; M. Stutzmann |
| - | Auger electron microscopy study of AlGaN grown by molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; PARK YOUNG KYUN; Kim Yong Tae; 최인훈 |
| - | Carbon doping characteristics of GaAs and Al//0//.//3Ga//0//.//7As using CCl//4 grown by atmospheric pressure MOCVD. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; KIM MOO SUNG; Min Suk-Ki; 곽명현; 마동성 |
| - | Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations. | SON CHANG-SIK; MIN BYUNG DON; 박만장; 황성민; Kim Seong Il; KIM MOO SUNG; Min Suk-Ki |
| - | Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; Min Suk-Ki; KIM MOO SUNG; 최인훈 |
| - | Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor deposition | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Conversion efficiency increase of GaAs solar cell grown on V-grooved GaAs substrate by metalorganc chemical vapor deposition. | SON CHANG-SIK; 박만장; MIN BYUNG DON; 황성민; Kim Seong Il; KIM EUN KYU; Min Suk-Ki |
| - | Crystallographic orientation dependence of carbon incorporation into GaAs epilayers | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Crystallographic orientation dependence of carbon incorporationin to GaAs epilayers using CBr ₄ and CCl ₄ | SON CHANG-SIK; Kim Seong Il; KIM YOUN; 황성민; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인철 |
| - | Effect of atomic bond structure on crystal orientation dependence of carbon doping in GaAs grown by MOCVD | PARK YOUNG KYUN; Kim Seong Il; KIM YOUN; SON CHANG-SIK; KIM EUN KYU; Min Suk-Ki |
| - | Effect of crystallographic orientation on carbon incorporation into GaAs and AlGaAs epilayers grown by metalorganic chemical vapor deposition. | SON CHANG-SIK; Kim Seong Il; Min Suk-Ki; KIM EUN KYU; KIM YOUN; 최인훈 |
| - | Effects of rapid thermal annealing on electrical properties of CBr//4-doped GaAs epilayers grown by atmospheric pressure MOCVD. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; Lee Sang Bae; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Electrical and optical properties of quantum wire laser | J. C. Jang; Kim Seong Il; 황승민; KIM HEO JEN; SON CHANG-SIK; J. H. Park; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN |
| - | Electrical properties of carbon-doped GaAs epilayers by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; KIM EUN KYU; MIN BYUNG DON; Min Suk-Ki; 최인훈 |
| - | Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4. | SON CHANG-SIK; 황성민; Kim Seong Il; 황성민; KIM MOO SUNG; Min Suk-Ki; KIM EUN KYU; KIM YOUN |
| - | Etching effect of carbon tetrabromide in the vertical growth of GaAs during metalorganic chemical vapor deposition | SON CHANG-SIK; PARK YOUNG KYUN; Kim Seong Il |
| - | Formation of submicron current-blocking layer for high power GaAs/AlGaAs quantum wire array layer. | SON CHANG-SIK; KIM TAE-GEUN; Kim Seong Il; PARK JEONG HO; 황성민; Min Suk-Ki; KIM EUN KYU; KPARK KYUNG HYUN |
| - | GaAs/AlGaAs buried channel stripe lasers by single-stage metalorganic chemical vapor deposition on V-grooved substrate | KIM EUN KYU; KIM TAE-GEUN; SON CHANG-SIK; 황성민; Min Suk-Ki |
| - | Heavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Luminescence study of carbon doped GaAs grown on GaAs(311)A substrate by MOCVD | KIM EUN KYU; Min Suk-Ki; S. Cho; D. Lee; SON CHANG-SIK; CHOI WON CHEOL; Kim Seong Il |
| - | Maskless selective epitaxial growth on patterned GaAs substrates by atmospheric pressure MOCVD | SON CHANG-SIK; Kim Seong Il; PARK YOUNG KYUN; 황성민; 한철구; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | One-step selective growth of GaAs on V-groove patterned GaAs substrate using CBr4 and CCl4 | KIM EUN KYU; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; SON CHANG-SIK; 한철구; 황성민; Min Suk-Ki; 최인훈 |
| - | Optical constants of AlGaN grown by molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; 최인훈; PARK YOUNG KYUN; Kim Yong Tae; O. Ambacher; M. Stutzmann |
| - | Optical properties of AlxGa1-xN grown by plasma induced molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; 최인훈; PARK YOUNG KYUN; Kim Yong Tae |
| - | Photothermal deflection spectroscopy on InGaN/GaN heterostructures | Jewon Kim; PARK YOUNG KYUN; Kim Yong Tae; SON CHANG-SIK; 최인훈; O. Ambacher; M. Stutzmann |
| - | Relaxation of lattice mismatch in In//1//-//xGa//xAs/GaAs grown by MOCVD. | SON CHANG-SIK; KANG JOON MO; KIM YOUN; KIM MOO SUNG; Min Suk-Ki |
| - | Relaxation of lattice mismatch in In//1//-//xGa//xAs/GaAs(311)A grown by molecular beam epitaxy(MBE). | SON CHANG-SIK; 전인상; 한철구; 이정훈; JIN HYOUN CHER; KIM MOO SUNG; Min Suk-Ki |
| - | Role of restrained vertical growth in realizing one-step maskless selective epitaxy on patterned GaAs substrate | SON CHANG-SIK; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; 최인훈 |
| - | Simulations of epitaxial growth on patterned GaAs substrates | KIM HEO JEN; Kim Seong Il; SON CHANG-SIK; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; KIM TAE WAN |
