| - | A method of improving dielectric constant and adhesion strength of methysilsesquioxyane by using a NH3 plasma treatment | 심현상; Kim Yong Tae; 김동준; 전형탁; 추상현; 차국현 |
| - | Characteristics of amorphous Ta-Si-N thin film for Cu metallization | 김동준; 정순필; Kim Yong Tae; Min Suk-Ki; 박종완 |
| - | Characteristics of molybdenum nitride thin film by N2+ ion implantation | 김동준; 김익수; Kim Yong Tae; 박종완 |
| - | Characteristics of tungsten boron nitride thin film by plasma enhanced chemical vapor deposition | 김동준; Kim Yong Tae; 박종완 |
| - | Comparison of amorphous and polycrystalline tungsten nitride diffusion barrier for MOCVD-Cu metallization. | Kim Yong Tae; 권철순; 김동준; 이창우; 최인훈 |
| - | Correlation between surface modification of HSQ films and phase transformation of Cu/W-N bilayers deposition on the NH3 plasma treated HSQ films | 김동준; 심현상; 박종완; Kim Yong Tae; Kim Seong Il; KIM CHUN KEUN |
| - | Digital deposition of tungsten nitride thin layer by cyclic exposure of WF//6 and NH₃ | 심현상; 김동준; Kim Yong Tae; 전형탁; PARK YOUNG KYUN; Kim Seong Il |
| - | Digital deposition of tungsten nitride thin layer by sequential exposure of tung sten hexafluoride and ammonia | 심현상; 김동준; Kim Yong Tae; 전형탁 |
| - | Effect of NH3 plasma treatment on improvement of reliability of W-B-N/HSQ thin films | 김동준; 심현상; Kim Yong Tae; 박종완 |
| - | Effects of boron implantation on the structural and diffusion barrier properties of W-N thin film | PARK YOUNG KYUN; Kim Yong Tae; 김동준; 박종완 |
| - | Effects of boron on diffusion barrier characteristics of PECVD W-B-N films | 김동준; Kim Yong Tae; 박종완 |
| - | Effects of nitrogen on preventing the crystallization of amorphous Ta-Si-N diffusion barrier | 김동준; Kim Yong Tae; 박종완 |
| - | Effects PECVD W-N diffusion barrier on thermal stress and electrical properties of Cu/W-N/SiOF multilevel interconnect | Kim Yong Tae; 김동준; 이석형; PARK YOUNG KYUN; 김익수; 박종완 |
| - | Enhancement of the electical and physical properties of Cu/W-N/HSQ interconnection scheme by NH₃ plasma treatment | 김동준; 심현상; Kim Yong Tae; KIM CHUN KEUN; 박종완 |
| - | High performance of W-B-N schottky contact to GaAs | Kim Yong Tae; 이창우; 김동준 |
| - | Improvement in diffusion barrier properties of PECVD W-N thin film by low energy BF2+ implantation | 김동준; Kim Yong Tae; PARK YOUNG KYUN; 심현상; 박종완 |
| - | Improvement in the characteristics of ammonia plasma treated MSQ(Methyl Silsesquioxane) | 심현상; 김동준; KIM CHUN KEUN; Kim Seong Il; Kim Yong Tae; 전형탁 |
| - | Reliability of Cu/W-N thin films deposited on low dielectric constant SiO:F ILD | 이석형; 김동준; 양성훈; 박정원; 손세일; 오경희; Kim Yong Tae; 박종완 |
| 2000-01-08 | TaSiNx확산 방지막의 제조방법과 그를 이용한 반도체 소자의 접촉접합및 다층금속 배선 | 김동준; 김용태 |
| 1997-10 | Thermal stabilities of PECVD W-B-N thin films as a diffusion barrier. | 김용태; 김동준; 이창우; 박종완 |
| 2023-09-18 | 다공성 박막을 이용한 메쉬형 분무 장치 및 이의 제조방법 | 이병철; 강동현; 심신용; 성혜정; 박진수; 박기주; 김동준 |
| - | 질소이온 주입된 질화텅스텐박막의 구리배선용 확산방지막 특성 . | Kim Yong Tae; 권철순; 김동준; Min Suk-Ki |
| 2000-02-10 | 초고집적 기억소자 및 비기억소자를 위한WBxNy확산방지막 제조방법 및 그를 이용한 다층금속연결 배선방법 | 김동준; 김용태 |
| - | (Undefined) | Kim Yong Tae; 김동준; 박종완; 권철순; Min Suk-Ki |
